2SC5810

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5810 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO 100 V VCEX 80 V VCEO 50 VEBO 7 V IC 1.0 A ICP 2.0 IB 0.1 A 2.0 PC (Note 1) W 1.0 Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start ...