2SC5788

Power Transistors 2SC5788 Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.2±0.2 10.0±0.2 Unit: mm 5.0±0.1 1.0±0.2 2.5±0.1 90˚ 13.0±0.2 ■ Features 1.2±0.1 High-speed switching (tstg: storage time/tf: fall time is short) Low collector to emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity / Allowing automatic insertion with radial taping 18.0±0.5 Solder Dip 0.65±0.1 0.35±0.1 1.48±0.2 0.65±0.1 1.05±0.1 0.55±0.1 C 1.0 2.25±0.2 0.55±0.1 e ■ Absolute Maximum Ratings TC = 25°C pe) Parameter Symbol Rating Unit nc d ge. ed ty Collector-base voltage (Emitter open) VCBO 60 V le sta ntinu Collector-emitter voltage (Base open) VCEO 60 V a e cyc isco Emitter-base voltage (Collector open) VEBO 6 V life d, d Collector current IC 3 A n u duct type Peak collector current ICP 6 A te tin Pro ued Collector power TC = 25°C PC 15 W four ntin dissipation Ta = 25°C 2 wing disco Junction temperature Tj 150 °C in n es folloplaned Storage temperature Tstg −55 ∼ +150 °C 2.5±0.2 2.5±0.2 123 1: Base 2: Collector 3: Emitter MT-4-A1 Package Marking Symbol: C5788 Internal Connection C B E a o includ type, ■ Electrical Characteristics TC = 25°C ± 3°C c tinued ance Parameter Symbol Conditions M is con inten Collector-emitter voltage (Base open) /Dis ma Collector-base cutoff current (Emitter open) D ance type, C...