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2SC5763 Dataheets PDF



Part Number 2SC5763
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC5763 Datasheet2SC5763 Datasheet (PDF)

Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co.

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Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : Collector 3 : Emitter 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C 2.55 SANYO : TO-220 Conditions Ratings 700 400 8 7 14 1.75 55 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Conditions Ratings min typ max 10 10 Unit µA µA Continued on next page. * : The hFE1 of the 2SC5763 is classified as follows. Rank hFE1 M 20 to 40 N 30 to 50 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0301 TS IM TA-3501 / 71801 TS IM TA-3234 No.6989-1/4 2SC5763 Continued from preceding page. Parameter Symbol hFE1 hFE2 hFE3 VCE(sat) VBE(sat) fT Cob V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=1mA IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=10V, IC=0.8A VCB=10V, f=1MHz IC=1mA, IE=0 IC=5mA, RBE=∞ IE=1mA, IC=0 IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 700 400 8 0.5 2.5 0.25 Ratings min 20* 10 10 0.8 1.5 17 80 V V MHz pF V V V µs µs µs typ max 50* Unit DC Current Gain Collectoe-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR 50Ω + 100µF VBE= --5V IB1 OUTPUT IB2 RB + 470µF VCC=200V RL 10 IC -- VCE A 700mA 600m 900mA 800m A Collector Current, IC -- A 8 7 6 5 4 IC -- VBE VCE=5V Collector Current, IC -- A 8 1000m A 6 500mA 400mA 300mA 200mA 100mA 20 ° C 0 0.2 0.4 0.6 4 2 1 2 0 0 2 4 6 8 IB=0 10 IT03053 0 0.8 1.0 1.2 IT03054 Collector-to-Emitter Voltage, VCE -- V 100 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1.0 7 VCE(sat) -- IC VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=5 Ta=120°C 5 3 2 DC Current Gain, hFE 3 2 25°C --40°C 10 7 5 3 2 1.0 0.01 0.1 7 5 3 2 --40°C 25°C = Ta 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT03055 0.01 0.01 2 3 5 7 0.1 2 3 Ta= 1 12 0°C 3 5 7 1.0 25°C --40°C 2 3 Collector Current, IC -- A 5 7 10 IT03056 No.6989-2/4 2SC5763 10 7 VBE(sat) -- IC IC / IB=5 Switching Time, SW Time -- µs 10 7 5 3 2 SW Time -- IC VCC=200V IC / IB1=5, IB2 / IB1=2.5 R load tstg Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 1.0 7 5 3 2 Ta= --40°C 1.0 7 5 3 2 25°C 120°C tf 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Bias A S O ICP=14A IC=7A DC 1m Collector Current, IC -- A 5 7 10 IT03057 0.1 0.1 2 3 5 7 1.0 2 3 5 2 Reverse Bias A S O ICP Collector Current, IC -- A 7 10 IT03058 Collector Current, IC -- A op Collector Current, IC -- A ≤50µs 10 0µ s 10 7 5 3 2 1.0 7 5 3 2 s era tio 10 ms S/ B Li mi ted n 0.01 1.0 Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 2.0 1.8 1.75 5 7 1000 IT03077 0.1 1.0 Tc=25°C IB2= --1.2A L=500µH, Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 80 70 5 7 1000 IT03060 PC -- Tc Collector Dissipation, PC -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- W 60 55 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 No he at sin k Ambient Temperature, Ta -- °C IT03061 .


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