TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5738
High-Speed Switching Applications DC-DC Converter Applications
2S...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC5738
High-Speed Switching Applications DC-DC Converter Applications
2SC5738
Unit: mm
High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 90 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
VCBO
40
V
VCEX
30
V
VCEO
20
V
VEBO
7
V
IC
3.5
A
ICP
6.0
IB
350
mA
PC
625
mW
(Note 1)
1000
JEDEC JEITA TOSHIBA
― ― 2-3S1C
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
St...