2SC5729

2SC5729 Transistor Medium power transistor (30V, 0.5A) 2SC5729 zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2047 zExternal dimensions (Units : mm) (1) 0.65 0.65 UMT3 0.3 (3) 1.25 2.1 0.15 0.2 (2) (1) Emitter (2) Base (3) Collector 0.1Min. Each lead has same dimensions Abbreviated symbol : UW zApplications Small signal low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping T106 3000 Code Basic ordering unit (pieces) 2SC5729 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperrature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 0.5 1.0 200 150 −55 to +150 Unit V V V A A mW °C °C ∗1 ∗2 0.7 0.9 1.3 2.0 Rev.A 1/3 2SC5729 Transistor zElectrical characteristics (Ta=25°C) Parameter Collector−base breakdown voltage Emitter−base breakdown voltage Symbol BVCEO Min. 30 30 6 − − − 120 − − − − − Typ. − − − − − 150 − 300 5 40 120 50 Max. − − − 1.0 1.0 300 390 − − − − − Unit V V V µA µA mV − MHz pF ns ns ns IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V Conditions Collector−emitter brea...