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2SC5714

Toshiba Semiconductor

NPN Transistor


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5714 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) ...



Toshiba Semiconductor

2SC5714

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