2SC5632

Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit: mm (0.425) 0.3+–00..01 ■ Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 8 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2R in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 15 V tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 2 µA M is con inten Forward current transfer ratio hFE VCE = 4 V, IC = 2 mA 100 350  /Dis ma hFE ratio * ∆hFE hFE2: VCE = 4 V, IC = 100 µA 0.6 1.5  D ance type, hFE1: VCE = 4 V, IC = 2 mA ten ce Collector-emitter saturation vol...