2SC5610

Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications ( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO220ML Conditions Ratings (–50)60 (–)50 (–)6 (–)7 (–)10 (–)1.2 2 18 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)500mA VCB=(–)10V, f=1MHz 150 (290) 330 (50)28 Conditions Ratings min typ max (–)0.1 (–)0.1 300 MHz MHz pF Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handl...