DatasheetsPDF.com

2SC5609 Dataheets PDF



Part Number 2SC5609
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5609 Datasheet2SC5609 Datasheet (PDF)

Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 0.33+–00..0025 Unit: mm 0.10+–00..0025 3 0.15 min. 0.80±0.05 1.20±0.05 ■ Features • High forward current transfer ratio hFE 5˚ • SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. / Parameter Symbol Rating .

  2SC5609   2SC5609



Document
Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 0.33+–00..0025 Unit: mm 0.10+–00..0025 3 0.15 min. 0.80±0.05 1.20±0.05 ■ Features • High forward current transfer ratio hFE 5˚ • SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 50 0 to 0.01 0.52±0.03 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 100 mW n u duct type Junction temperature Tj 125 °C te tin Pro ued Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 3F 0.15 max. in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA inten ance Forward current transfer ratio hFE1 VCE = 10 V, IC = 2 mA 180 390  Ma inten hFE2 VCE = 2 V, IC = 100 mA 90  ma Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V ned Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 80 MHz (pla Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2003 SJC00185BED 1 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of techn.


2SC5607 2SC5609 2SC5610


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)