2SC5567

Ordering number:ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2163 [2SA2014/2SC5567] 4.5 1.6 1.5 Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 3 0.5 0.4 1.5 3.0 0.75 2 1 0.4 1.0 2.5 4.25max Specifications ( ) : 2SA2014 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–)15 (–)15 (–)5 (–)9 (–)12 (–)1.2 1.3 3.5 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)500mA VCE=(–)2V, IC=(–)500mA VCB=(–)10V, f=1MHz 200 (220) 280 (90)50 Conditions Ratings min typ max (–)0.1 (–)0.1 560 MHz MHz pF Unit µA µA Marking : 2SA2014 : AU 2SC5567 ...