2SC5540

Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5540] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 0.6 Ratings 16 8 1.5 20 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=4mA VCE=5V, IC=4mA VCB=10V, f=1MHz VCE=5V, IC=7mA, f=1GHz VCE=5V, IC=4mA, f=1GHz 10 90 10 0.4 13 1.3 2.8 0.7 Conditions Ratings min typ max 1.0 10 200 GHz pF dB dB Unit µA µA Marking : HN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s co...