Ordering number:ENN6340
NPN Epitaxial Planar Silicon Transistor
2SC5537
Low-Voltage, Low-Current High-frequency Amplif...
Ordering number:ENN6340
NPN Epitaxial Planar Silicon
Transistor
2SC5537
Low-Voltage, Low-Current High-frequency Amplifier Applications
Features
· Low voltage, low current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)
Package Dimensions
unit:mm 2159
[2SC5537]
1.4
0.3
0.25 3
0.1
0.8
0.2
0.3
1 0.45
2
1.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
1 : Base 2 : Emitter 3 : Collector SANYO : SSFP
0.6
Ratings 12 6 1.5 15 80 150 –55 to +150
Unit V V V mA mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob | S21e |2 1 | S21e |2 2 NF1 NF2 VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=1mA VCE=1V, IC=1mA VCB=1V, f=1MHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz 4.5 90 5 0.55 7 10.5 2.6 1.9 4.5 0.9 Conditions Ratings min typ max 1.0 10 200 GHz pF dB dB dB dB Unit µA µA
Marking : CN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels...
