2SC5536

Ordering number:ENN6290 NPN Epitaxial Planar Silicon Transistor 2SC5536 VHF Low-Noise Amplifier , OSC Applications Features · Low noise : NF=1.8dB typ (f=150MHz). · High gain : S21e2=16dB typ (f=150MHz). · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm) Package Dimensions unit:mm 2159 [2SC5536] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 0.6 Ratings 20 12 2 50 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=2V, IC=3mA VCE=2V, IC=50mA VCE=2V, IC=3mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=2V, IC=3mA, f=150MHz VCE=2V, IC=3mA, f=150MHz 13 80 70 1.0 1.7 1.1 0.8 16 1.8 3.0 1.8 GHz pF pF dB dB Conditions Ratings min typ max 1.0 10 200 Unit µA µA Marking : MA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircr...