2SC5504

Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=11GHz typ. · Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : S21e2=6dB typ (f=1.5GHz). Package Dimensions unit:mm 2161 [2SC5504] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 0.7 0.9 Ratings 20 10 1.5 30 300 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT1 fT2 Cob Cre VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=1V, IC=1mA VCB=10V, f=1MHz VCB=10V, f=1MHz 90* 8 11 7 0.45 0.25 0.7 Conditions Ratings min typ max 1.0 10 270* GHz GHz pF pF Unit µA µA * : The 2SC5504 is classified by 10mA hFE as follows : Continued on next page. Marking Rank hFE 4 90 to 180 MN 5 135 to 27...