2SC5454

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE High gain, low noise Small reverse transfer capacitance Can operate at low voltage PACKAGE DIMENSIONS (in mm) 0.4 –0.05 1.5 –0.1 +0.2 2 1 Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCEO VEBO IC PT Tj Tstg 6 2 50 200 150 –65 to +150 V 1.1–0.1 0.8 +0.2 5° 5° V mA mW °C °C 5° 0 to 0.1 5° ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF 2 PIN CONNECTIONS 1: Collector 2: Emitter 3: Base 4: Emitter MIN. TYP. MAX. 0.1 0.1 UNIT TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 20 mANote 1 0.16 +0.1 –0.06 0.4 Collector to Base Voltage VCBO 9 V 0.6 –0.05 +0.1 +0.1 –0.05 PARAMETER SYMBOL RATING UNIT 4 (1.9) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 2.9 ± 0.2 (1.8) 0.85 0.95 3 0.4 –0.05 +0.1 +0.1 2.8 –0.3 +0.2 µA µA 75 14.5 0.3 10 12.0 1.5 150 GHz 0.5 pF dB 2.5 dB VCE = 3 V, IC = 20 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridg...