PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5436
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQ...
PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
2SC5436
NPN EPITAXIAL SILICON
TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) Contains same chip as 2SC5186
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05 0.8 ± 0.1
1.4 ± 0.1 (0.9) 0.45 0.45
0.2 +0.1 –0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 5 3 2 30 90 150 –65 to +150 UNIT V V
TN
3
1
mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure (1) Noise Figure (2) SYMBOL ICBO IEBO hFE Cre fT (1) fT (2) |S21e|2 (1) |S21e|2 (2) NF (1) NF (2) TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 20 mANote 1 VCB = 2 V, IE = 0, f = 1 MHzNote 2 VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz
PIN CONNECTIONS 1: Emitter 2: Base 3: Collector
MIN.
TYP.
MAX. 100 100
UNIT nA nA
70 0.4 9.0 7.0 8.5 6.0 14.0 12.0 10.0 9.0 1.4 1.4
130 0.8 pF GHz GHz dB ...