2SC5409

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE High fT 16 GHz TYP. High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold Package PACKAGE DIMENSIONS (in mm) 2.1±0.1 1.25±0.1 0.2 +0.1 –0 0.15 +0.1 –0 1.3 0.65 0.65 2.0±0.2 E ORDERING INFORMATION PART NUMBER 2SC5409-T1 QUANTITY 3 kpcs/reel PACKING STYLE 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0.9±0.1 B 0.7 Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 5 3 2 30 90 150 –65 to +150 UNIT V V V mA mW °C °C E: Emitter C: Collector B: Base Because this product uses high-frequency process, avoid excessive input of static electricity, etc. Document No. P12096EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan 0 to 0.1 © E E C E T97 1997 2SC5409 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF 2 TEST CONDITIONS VCB = 5 V, IE = 0...