Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4....
Power
Transistors
2SC5406, 2SC5406A
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C)
Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
10.0
s Features
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
5°
1
2
3
2.0
1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time 2SC5406 2SC5406A
(TC=25˚C)
Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 7A IC = 7A, IB = 1.75A IC = 7A, IB = 1.75A VCE = 10V, IC = 0, f = 0.5MHz IC = 7A, IB1 = 1.75A, IB2 = –3.5A 3 4.0 0.3 5 min typ max 50 1 50 12 3 1.5 V V MHz µs µs Unit µA mA ...
