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2SC5406 Dataheets PDF



Part Number 2SC5406
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5406 Datasheet2SC5406 Datasheet (PDF)

Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings .

  2SC5406   2SC5406


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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5° 1 2 3 2.0 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time 2SC5406 2SC5406A (TC=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 7A IC = 7A, IB = 1.75A IC = 7A, IB = 1.75A VCE = 10V, IC = 0, f = 0.5MHz IC = 7A, IB1 = 1.75A, IB2 = –3.5A 3 4.0 0.3 5 min typ max 50 1 50 12 3 1.5 V V MHz µs µs Unit µA mA µA 1 Power Transistors PC — Ta 140 2SC5406, 2SC5406A Area of safe operation (ASO) 100 ICP t=100µs Area of safe operation, horizontal operation ASO 25 f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. Collector power dissipation PC (W) 120 (1) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink. (3) Without heat sink Collector current IC (A) 100 10ms 1 DC Collector current IC (A) 10 IC 1ms 20 80 15 60 0.1 10 40 20 (2) (3) 0.001 0 20 40 60 80 100 120 140 160 1 3 10 30 100 300 1000 0 0 500 <1mA 1000 0 1500 2SC5406 2SC5406A 0.01 5 2000 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) 2 .


2SC5405 2SC5406 2SC5406A


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