2SC5378

Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm s Features q q q q 2.1±0.1 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 (Ta=25˚C) Ratings 15 8 2 80 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0 to 0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 0.7±0.1 s Absolute Maximum Ratings 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : HT s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Noise figure Foward transfer gain (Ta=25˚C) Symbol ICBO IEBO hFE fT NF | S21e |2 *1 Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 5V, IC = 10mA VCB = 5V, IE = 0, f = 1MHz VCE = 5V, IC = 10mA, f = 2GHz VCE = 5V, IC = 3mA, f = 1GHz VCE = 5V, IC = 10mA, f = 1GHz min typ max 1 1 0.15–0.05 +0.1 0.3–0 +0.1 Unit µA µA 80 0.6 7 1.6 8.5 11 200 1 pF GHz 2 dB dB Cob *1h FE Rank classification Q 80 ~ 115 R 95 ~ 155 S 135 ~ 200 Rank hFE 1 Transistor PC — Ta 200 120 Ta=25˚C 10...