2SC5353
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5353
Switching Regulator and High Voltage ...
2SC5353
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT process)
2SC5353
Switching
Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications
Unit: mm
Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 2.0 25 150
www.DataSheet.co.kr
Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
−55 to 150
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-10
Datasheet pdf - http://www.DataSheet4U.net/
2SC5353
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off...