DATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTO...
DATA SHEET PRELIMINARY DATA SHEET
Silicon
Transistor
2SC5337
NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
The 2SC5337 is a high-frequency
transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.
FEATURES
PACKAGE DIMENSIONS
(in millimeters)
4.5±0.1 1.6±0.2 1.5±0.1
Low distortion IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
Low noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz
C E B E
3.95±0.25 2.45±0.1
New power mini-mold package version of a 4-pin type gain-improved on the 2SC3356
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg
Note1
0.8MIN.
Rating 30 15 3.0 250 2.0 150 –65 to +150
Unit V V V mA W °C °C
0.42 ±0.06 1.5 3.0 0.46 ±0.06
0.42 ±0.06
0.25±0.02
PIN CONNECTIONS E: Emitter C: Collector B: Base
Note 1. 0.7 mm × 16 cm double sided ceramic substrate (Copper plaiting)
2
Document No. P10939EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan
©
1996
2SC5337
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Insertion Power Gain Noise Figure 1 Noise Figure 2 2nd Order Intermoduration Distortion Symbo...