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2SC5336

Part Number	2SC5336
Manufacturer	NEC
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLI...
Datasheet	2SC5336 PDF File

Overview

PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • PACKAGE DIMENSIONS (in millimeters) 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 • High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Note1 PT Rating 20 12 3.
0 100 1.
2 150 –65 to +150 Unit 0.
8MIN.
C E B E V V V mA W °C °C 0.
42 ±0.
06 1.
5 3.
0...

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