TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5307
High Voltage Switching Applications
2SC5307
Unit: mm
High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base vo...
