2SC5305LS

Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5305] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1:Base 2:Collector 3:Emitter SANYO:TO-220FI (LS) 2.55 2.55 Conditions 2.4 0.6 Ratings 1200 600 9 6 12 2 35 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta=25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector Saturation Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCB=600V, IE=0 VCE=1200V, RBE=0 600 1.0 1.0 1.5 30 10 2.5 0.15 µs µs 40 50 Conditons Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=3.0A, IB=0.6A VBE(sat) hFE1 hFE2 tstg tf IC=3.0A, IB=0.6A VCE=5V, IC=0.3A VCE=5V, IC=2.5A IC=3.5A, IB1=0.6A, IB2=–1.2A IC=3.5A, IB1=0.6A, IB2=–1.2A Any and all SANYO products described or contained herein do not ha...