2SC5229

Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. · Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e2=11dB typ (f=1GHz). Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2× 0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance ICBO IEBO hFE fT Cob Cre * : The 2SC5229 is classified by 20mA hFE as follows : 60 D 120 90 E 180 135 F 270 Marking : CY hFE rank : D, E, F VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings 20 10 2 70 700 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ max Unit 1.0 µA 10 µA 60* 270* 4.5 6.5 GHz 0.85 1.3 pF 0.55 pF Continued on next page. Any and all SANYO products described or...