2SC5191

DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current 2.9±0.2 PACKAGE DRAWINGS (Unit: mm) 2.8±0.2 0.4 +0.1 −0.05 1.5 0.65 +0.1 −0.15 0.95 IC = 100 mA Mini Mold Package EIAJ: SC-59 2 T88 0.95 ORDERING INFORMATION PART NUMBER 2SC5191-T1 0.3 Marking 0.16 +0.1 −0.06 QUANTITY 3 Kpcs/Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape. 1.1 to 1.4 2SC5191-T2 3 Kpcs/Reel Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 200 150 −65 to +150 UNIT V V V mA mW °C °C This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity. Document No. P10395EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan © 0 to 0...