DATA SHEET
SILICON TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz Ultra Super Mini-Mold package
PACKAGE DIMENSIONS (Uni...
