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2SC5180

NPN TRANSISTOR

Description

DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES 2 Low current consumption and high gain S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz PACKAGE DIMENSIONS (Units : mm) 2.1 ± 0.2 1.25 ± 0.1 Supper Mini-Mold package S21e 2 = 11 dB TYP. @ VCE = 1 ...

NEC

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