2SC5179

DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Small Mini-Mold package EIAJ: SC-70 PACKAGE DIMENSIONS (Units: mm) 2.1±0.1 1.25±0.1 2.0±0.2 +0.1 0.3 –0 0.65 ORDERING INFORMATION PART NUMBER 2SC5179-T1 QUANTITY ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (Collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (Emitter) and No. 2 (Base) facing the perforations 2 T84 0.65 3000 units/reel 2SC5179-T2 0.3 Marking evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 5 3 2 10 30 150 –65 to +150 V V V mA mW °C °C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12103EJ2V0DS00 (2nd edition) (Previous No. TC-2476) Date Published November 1996 N Printed in Japan 0 to 0.1 * Contact your NEC sales representatives to order samples for 0.9±0.1 © 0.15 –0.05 +0.1 0.3 –0 +0.1 1 3 1994 2SC5179 ELECTRICAL CHARACTERISTI...