2SC5130

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5130 600 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 100max 10max 400min 10 to 30 0.5max 1.3max 20typ 30typ (Ta=25°C) 2SC5130 Unit µA 16.9±0.3 V V V 8.4±0.2 µA 13.0min MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.3 ton (µs) 1max tstg (µs) 2max tf (µs) 0.3max 3.9 B C E ±0.2 I C – V CE Characteristics (Typical) 800 mA VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1.5 I C / I B =5 Const. I C – V BE Temperature Characteristics (Typical) (V C E =4V) 5 5 50 0m A Collector Current I C (A) 30 0m A 1.0 3 Collector Current I C (A) 4 4 3 15 0m A 2 p) 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. mp) e Te (Cas 0 0 1 2 3 4 0 0.01 –55˚C (Case Temp) 0.05 0.1 0.5 1 5 0 0 0.2 0.4 125 ...