2SC5110

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 30 60 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA TOSHIBA SC-70 2-2E1A Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual Weight: 6 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-04-14 2SC5110 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA f...