2SC5108FT

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT 2SC5108FT For VCO Application Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 15 30 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 2.2mg (typ.) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant Symbol Test Condition Min Typ. Max Unit ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 Cob Cre Cc･rbb’...