TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108FT
2SC5108FT
For VCO Application Absolute Maximum Ratings ...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC5108FT
2SC5108FT
For VCO Application Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IB IC PC Tj Tstg
20 10 3 15 30 100 125 −55 to 125
V V V mA mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 2.2mg (typ.)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant
Symbol
Test Condition
Min Typ. Max Unit
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE (Note 1)
VCE = 5 V, IC = 5 mA
fT ⎪S21e⎪2
Cob Cre Cc・rbb’...