2SC5071

2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ (Ta=25°C) 2SC5071 Unit µA µA 19.9±0.3 V V V MHz pF 4.0 a b ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1.0max tstg (µs) 3.0max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 12 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V BE Temperature Characteristics (Typical) (V CE =4V) 12 1A 10 Collector Current I C (A) 80 0m A 60 0m A 10 V B E (sat) 1 –55˚C (Case Temp) Collector Current I C (A) 8 400m A 8 6 25˚C (Cas 125˚C (C e Temp) as e 25 Temp ) ˚C...