2SC5043

Ordering number:EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5043] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 1600 800 6 10 25 3.0 70 150 –55 to +150 2.0 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1600V, RBE=0 800 40 130 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=8A, IB=2A VBE(sat) IC=8A, IB=2A Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...