2SC5030

2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.3 W Maximum Ratings (Ta = 25°C) Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage DC I Collector current Pulse (Note) Base current Collector power dissipation Junction temperature Storage temperature range mbol VCBO VCES VCEO 20 VEBO C Rating 50 40 Unit V V V 8 5 8 0.5 3 150 −55 to 150 JEDEC A ― ― 8M1A ICP IB PC 1. Tj Tstg JEITA TOSHIBA 2- A W °C °C Weight: 0.55 g (typ.) Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Sy Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 40 mA VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 20 800 250 ― ― ― 150 ― 45 Typ. ― 100 ― 100 ― ― 3200 ― ― 0. ― 1. ― 5 2 ― MH ― pF V V z ―V Max Un...