DATA SHEET
SILICON TRANSISTOR
2SC5013
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER...
DATA SHEET
SILICON
TRANSISTOR
2SC5013
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
Small Package High Gain Bandwidth Product (fT = 10 GHz TYP.) Low Noise, High Gain Low Voltage Operation
0.3 +0.1 –0.05
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2 1.25 ± 0.1
0.3 +0.1 –0.05 (LEADS 2, 3, 4) (1.3)
2.0 ± 0.2
0.60 0.65
ORDERING INFORMATION
PART NUMBER 2SC5013-T1
XYZ
QUANTITY 3 Kpcs/Reel.
PACKING STYLE Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.
(1.25)
2
3
1
4
0.4 +0.1 –0.05 0.9 ± 0.1 0.3
2SC5013-T2
3 Kpcs/Reel.
0 to 0.1
* Please contact with responsible NEC person, If you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5013)
PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 150 150 –65 to +150 V V V mA mW ˚C ˚C
Caution; Electrostatic Sensitive Device.
Document No. P10401EJ2V0DS00 (2nd edition) (Previous No. TD-2413) Date Published July 1995 P Printed in Japan
©
0.3 +0.1 –0.05 0.15 +0.1 –0.05
1993
2SC5013
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Collector Cutoff ...