DATA SHEET
SILICON TRANSISTOR
2SC5009
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2...
DATA SHEET
SILICON
TRANSISTOR
2SC5009
NPN SILICON EPITAXIAL
TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5009 is an
NPN epitaxial silicon
transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique.
1.6± 0.1 1.0
PACKAGE DIMENSIONS
in milimeters
1.6± 0.1 0.8± 0.1 2
0.2+0.1 –0 0.5 0.3 +0.1 –0 0.15
+0.1 –0.05
0.5
FEATURES
Low Voltage Use. High fT Low Cre Low NF High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
3
1
Ultra Super Mini Mold Package.
0.6
|S21e|2 :
0.75± 0.05
ORDERING INFORMATION
PART NUMBER 2SC5009 2SC5009-T1
QUANTITY 50 pcs./Unit 3 kpcs./Reel
PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape.
1. Emitter 2. Base 3. Collector
* Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO...