2SC5009

DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary new fabrication technique. 1.6± 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6± 0.1 0.8± 0.1 2 0.2+0.1 –0 0.5 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5 FEATURES Low Voltage Use. High fT Low Cre Low NF High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 3 1 Ultra Super Mini Mold Package. 0.6 |S21e|2 : 0.75± 0.05 ORDERING INFORMATION PART NUMBER 2SC5009 2SC5009-T1 QUANTITY 50 pcs./Unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 1. Emitter 2. Base 3. Collector * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO...