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2SC5007 Dataheets PDF



Part Number 2SC5007
Manufacturers NEC
Logo NEC
Description NPN TRANSISTOR
Datasheet 2SC5007 Datasheet2SC5007 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.

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DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES • Low Voltage Use. • High fT • Low Cre • Low NF : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 0.5 1.6 ± 0.1 1.0 0.2+0.1 –0 0.3 +0.1 –0 0.15 +0.1 –0.05 PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 • High |S21e|2 : 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Ultra Super Mini Mold Package. 0.5 ORDERING INFORMATION PART NUMBER 2SC5007 2SC5007-T1 3 1 QUANTITY 50 pcs./Unit 3 kpcs./Reel PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 0.75 ± 0.05 0.6 * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 125 150 –65 to +150 V V V mA mW ˚C ˚C Document No. P10386EJ2V0DS00 (2nd edition) (Previous No. TD-2400) Date Published July 1995 P Printed in Japan 0 to 0.1 © 1993 2SC5007 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF 10.0 80 4.5 7.0 0.45 12.0 1.4 2.7 0.9 MIN. TYP. MAX. 0.8 0.8 160 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA*1 VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz µA µA *1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification RANK Marking hFE FB 34 80 to 160 2 2SC5007 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 PT – Total Power Dissipation – mW Free Air IC – Collector Current – mA 20 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 100 10 50 0 50 100 TA – Ambient Temperature – ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 150 0 0.5 VBE – Base to Emitter Voltage – V DC CURRENT GAIN vs. COLLECTOR CURRENT 1.0 25 200 VCE = 3 V IC – Collector Current – mA 20 15 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA 20 µA hFE – DC Current Gain IB = 160 µA 100 50 10 5 20 0 5 VCE – Collector to Emitter Voltage – V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 10 0.5 1 2 5 10 20 IC – Collector Current – mA INSERTION POWER GAIN vs. COLLECTOR CURRENT 50 12 fT – Gain Bandwidth Product – GHz 10 8 6 4 2 0 0.5 |S21e|2 – Insertion Power Gain – dB VCE = 3 V f = 1 GHZ 16 14 12 10 8 6 4 2 0 1 2 5 10 20 50 0.5 VCE = 3 V f = 1 GHZ 1 2 5 10 20 50 IC – Collector Current – mA IC – Collector Current – mA 3 2SC5007 NOISE FIGURE vs. COLLECTOR CURRENT 3 MAG – Maximum Available Gain – dB |S21e|2 – Insertion Power Gain – dB VCE = 3 V f = 1 GHZ NF – Noise Figure – dB 25 MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY VCE = 3 V IC = 7 mA 20 MAG 15 2 10 |S21e|2 5 1 0 0.5 1 2 5 10 20 50 IC – Collector Current – mA FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 Cre – Feed-Back Capacitance – pF f = 1 MHZ 1.0 0 0.1 0.2 0.5 1.0 2.0 5.0 f – Frequency – GHz 0.5 0.2 0.1 1 2 5 10 20 50 VCB – Collector to Base Voltage – V 4 2SC5007 S-PARAMETER VCE = 3 V, IC = 10 mA, ZO = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400.00 2500.00 2600.00 2700.00 2800.00 2900.00 3000.00 S11 MAG .800 .650 .533 .449 .401 .372 .353 .342 .337 .334 .334 .337 .339 .344 .348 .356 .362 .373 .385 .394 .401 .408 .419 .425 .436 .444 .453 .464 .474 .486 S21 ANG –29.5 –60.0 –86.2 –106.2 –122.0 –134.1 –144.4 –153.2 –160.8 –167.5 –173.4 –179.3 176.0 171.5 167.4 163.6 159.9 156.9 152.7 148.8 145.6 143.0 139.9 137.3 135.1 132.2 130.2 127.7 125.5 123.5 S12 ANG 147.9 126.3 109.0 96.1 85.5 76.9 69.3 62.1 55.4 49.0 43.2 37.1 31.3 25.7 20.0 14.7 9.1 4.0 –1.6 –7.2 –12.6 –17.8 –23.0 –28.2 –33.1 –38.5 –43.3 –48.5 –53.4 –58.4 S22 ANG 69.0 56.1 50.1 46.0 43.6 41.4 38.9 36.3 33.5 30.9 27.5 24.9 21.2 17.9 14.6 10.9 7.1 3.2 –.9 –4.2 –8.0 –11.9 –15.4 –19.7 –23.1 –27.3 –3.


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