2SC5003

Built-in Damper Diode sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5003 1500 800 6 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SC5003 (Ta=25°C) 2SC5003 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Unit µA mA mA V Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 0.8±0.2 15.6±0.2 23.0±0.3 9.5±0.2 Equivalent circuit B C ( 50 Ω ) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 V V V MHz pF a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.8 IB2 (A) –1.6 tstg (µs) 4.0max tf (µs) 0.2max 3.35 1.5 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 7 1.7 A VCE(sat)–IC Characteristics (Typical) 3 (I C : I B = 5 :1) I C – V BE Temperature Characteristics (Typical) 7 (V CE =5V) 1. 4A 6 900 mA 6 Collector Current I C (A) 5 600 mA 2 Collector Current I C (A) 4 4 ...