2SC4957

DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. 0.4 +0.1 –0.05 0.4 +0.1 –0.05 3 4 0 to 0.1 5˚ 0.16 +0.1 –0.06 0.4 +0.1 –0.05 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION PART NUMBER 2SC4957-T1 2.8 +0.2 –0.3 1.5 +0.2 –0.1 2 2.9 ±0.2 (1.8) 0.85 0.95 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. 0.6 +0.1 –0.05 1 5˚ 5˚ 1.1 +0.2 –0.1 2SC4957-T2 3 Kpcs/Reel. 0.8 5˚ * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 30 180 150 –65 to +150 V V V mA mW ˚C ˚C 1. 2. 3. 4. Collector Emitter Base Emitter The information in this document is subject to change without notice. Caution; Electrostatic Sensitive Device. Document No. P10379EJ2V0DS00 (2nd edition) (Previous No. TD-2408) Date Published July 1995 P Printed in Japan © (1.9) 1993 2SC4957 ELECTRICAL CHARACTERISTICS (TA = ...