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2SC4935 Dataheets PDF



Part Number 2SC4935
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4935 Datasheet2SC4935 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications 2SC4935 Unit: mm • Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VEBO IC IB PC 5V 3A 0.3 A 2 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications 2SC4935 Unit: mm • Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VEBO IC IB PC 5V 3A 0.3 A 2 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-67 temperature/current/voltage and the significant change in TOSHIBA 2-10R1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2010-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note) VCE = 2 V, IC = 0.5 A hFE (2) VCE (sat) VCE = 2 V, IC = 2.5 A IC = 2 A, IB = 0.2 A VBE VCE = 2 V, IC = 0.5 A fT VCE = 2 V, IC = 0.5 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking 2SC4935 Min Typ. Max Unit ― ― 1 μA ― ― 1 μA 50 ― ― V 70 ― 240 30 ― ― ― 0.4 0.6 V ― 0.75 1 V ― 80 ― MHz ― 30 ― pF C4935 Characteristics indicator Part No. (or abbreviation code) Lot No. NOTE 2: Note 2 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 http://store.iiic.cc/ 2010-12-21 Collector current IC (A) IC – VCE 40 30 3 50 2 25 20 15 10 1 IB = 5 mA Common emitter Tc = 25°C 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Collector current IC (A) 2SC4935 IC – VBE 3 Common emitter VCE = 2 V 2.5 2 1.5 Tc = 100°C 1 0.5 25 −25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Base-emitter voltage VBE (V) DC current gain hFE 1000 hFE – IC 300 Tc = 100°C 100 30 25 −25 10 3 0.01 Common emitter VCE = 2 V 0.1 1 Collector current IC (A) .


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