Ordering number:EN4757
NPN Triple Diffused Planar Silicon Transistor
2SC4924
Ultrahigh-Definition CRT Display Horizont...
Ordering number:EN4757
NPN Triple Diffused Planar Silicon
Transistor
2SC4924
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf typ=100ns). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC4924]
3.4 16.0
5.0 8.0
5.6 3.1
21.0
22.0
4.0
2.8 2.0
20.4
2.0
1.0
0.6
1
2
3
3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
w w w . D a t a S h e e t . c o . k r
5.45
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Conditions
Ratings 1500 800 6 10 25 3.0 70 150 –55 to +150
2.0
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 1.0 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V
VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=8A, IB=2A VBE(sat) IC=8A, IB=2A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of r...