2SC4910

Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features · On-chip emitter ballast resistors. Package Dimensions unit:mm 2084B [2SC4910] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg 2.5 Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol Conditions ICBO IEBO hFE V(BR)CBO V(BR)CEO V(BR)EBO VCB=30V, IE=0 VEB=2V, IC=0 VCE=10V, IC=200mA IC=100µA, IE=0 IC=1mA, RBE=∞ IE=100µA, IC=0 2.5 7.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : FLP Ratings 38 18 3 0.75 1.2 150 1.5 150 –55 to +150 Unit V V V A A mA W ˚C ˚C Ratings min typ 20 38 18 3 max 50 50 200 Unit µA µA V V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage....