2SC4898

Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q 15.0±0.5 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO ICP IC PC Tj Tstg (TC=25˚C) Ratings 1000 500 10 5 40 2 150 –55 to +150 Unit V V A A W ˚C ˚C 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 0.55±0.15 1 2 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO hFE VCE(sat) fT ton tstg tf Conditions VCB = 1000V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 250V 8 1.5 3 1.0 20 min typ max 100 100 40 1 V MHz µs µs µs Unit µA µA 1 Power Transistors IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 TC=25˚C 9 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 IC/IB=5 TC=25˚C 2SC4898 VCE(sat) — IC 1000 hFE — IC TC=25˚C VCE=5V 300 C...