2SC4865

Ordering number:EN4760 NPN Epitaxial Planar Silicon Transistor 2SC4865 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12.5dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC4865] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=5V, IC=7mA, f=1GHz * : The 2SC4865 is classified by 20mA hFE as follows : 60 3 120 Marking : FN hFE rank : 3, 4, 5 90 4 180 135 5 270 0.8 1.1 0.5 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : CP4 Ratings 16 8 2 70 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 7.0 0.95 8.5 12.5 1.1 max 1.0 10 270* 1.4 2.0 Unit µA µA GHz pF dB dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extr...