Document
2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ.
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4702
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “XV–”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob Min 300 300 5 — — 60 — — Typ — — — — — — 80 1.5 Max — — — 0.1 0.5 150 — — MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 250 V, IE = 0 I C = 30 mA, IB = 3 mA VCE = 6 V, IC = 2 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz
2
2SC4702
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) Typical Output Characteristics 10 100 80 Pulse Test 60 50 6 40 4 30 20 IB = 10 µA 0 50 100 Ambient Temperature Ta (°C) 150 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V)
8
100
50
2
Typical Transfer Characteristics 100 Collector Current IC (mA) Ta = 75°C DC Current Transfer Ratio hFE 25 –25 1,000
DC Current Transfer Ratio vs. Collector Current
Ta = 75°C 100
25
10
–25
1.0 VCE = 6 V Pulse Test 0.1
10 VCE = 6 V Pulse Test 1 0.1
0.01 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)
1.0 10 Collector Current IC (mA)
100
3
2SC4702
Collector to Emitter Saturation Voltage vs. Collector Current 10 IC/IB = 10 Pulse Test 1.0 Ta = 75°C 25 –25 0.1 Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 1,000 VCE = 6 V
Collector to Emitter Saturation Voltage VCE (sat) (V)
100
10
0.01 0.1
1.0 10 Collector Current IC (mA)
100
1 0.1
1.0 10 Collector Current IC (mA)
100
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 f = 1 MHz IE = 0 10
1.0
0.1 0.1
1.0 10 100 Collector to Base Voltage VCB (V)
4
Unit: mm
0.65
0.10 3 – 0.4 + – 0.05
0.16 – 0.06
+ 0.10
1.5 ± 0.15
+ 0.2 – 0.6
0 – 0.1
0.95
0.95
1.9 ± 0.2 2.95 ± 0.2
0.3
+ 0.2 1.1 – 0.1
0.65
2.8
Hitachi Code JEDEC EIAJ Weight (reference value)
MPAK — Conforms 0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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