2SC4693

2SC4693 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Features High gain bandwidth product fT = 2.5 GHz Typ. Large collector power dissipation P C = 900 mW Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4693 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 30 20 3 300 500 900 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE fT Cob Min 30 20 — — 50 1.5 — Typ — — — — — 2.5 4.5 Max — — 1.0 10 200 — — GHz pF Unit V V µA µA Test conditions I C = 100 µA, IE = 0 I C = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4693 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 900 Collector Current IC (mA) 200 4.0 3.5 3.0 2.5 2.0 1.5 100 1.0 600 300 0.5 mA IB = 0 0 50 100 Ambient Temperature Ta (°C) 150 0 1.0 2.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 1,000 DC C...