2SC4688

2SC4688 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4688 Power Amplifier Applications Unit: mm Complementary to 2SA1803 Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 80 80 5 6 12 0.6 55 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― 2-16F1A JEITA TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high Weight: 5.8 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-11-10 2SC4688 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturatio...