TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications Computer, Co...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications Computer, Counter Applications
2SC4667
Unit: mm
High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage Emitter-base voltage Collector current Base current
VCEO VEBO
IC IB
15 V 5V 200 mA 40 mA
Collector power dissipation Junction temperature Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
JEDEC JEITA
― SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01
2SC4667
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off cur...